RF GaN Market Research Report Information By Type (GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond), By Application (IT & Telecomm, Aerospace, Military & Defense), And By Region (North America, Europe, Asia-Pacific, And Rest Of The World) –Market Forecast Till 2032

Global RF GaN Market Overview:

RF GaN Market Size was valued at USD 0.5 billion in 2022. The RF GaN market industry is projected to grow from USD 0.655 Billion in 2023 to USD 5.680828 billion by 2032, exhibiting a compound annual growth rate (CAGR) of 31.00% during the forecast period (2023 - 2032). Increased demand for IT & telecommunication equipment and the adoption of energy & power applications are the key market drivers enhancing the market growth.

Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

RF GaN Market Trends

• Strong Demand from Telecom Infrastructure is driving the market growth

The telecommunications industry is regarded as a significant adopter of digital transformation technologies, both a key driver of worldwide digitization and an industry witnessing a large-scale change in its market environment. Investment by the telecommunications industry in interoperability and technology reinforced a paradigm shift in capital flows and information through the global economy while providing the building blocks for the emergence of completely new business models across industries.

GaN RF technology is quickly becoming the preferred option for network service providers because of its capacity to offer connections with higher-frequency data bandwidth. These devices ensure that the device generates the maximum frequency at the necessary band by preventing interference from other frequency bands. GaN RF power devices would enable users to upload and download high-quality media content, such as music and photographs, as well as play online games and watch online TV shows on maximum frequency bands, which is anticipated to increase the use of current mobile devices. Hence, strong demand from the telecommunications industry drives market CAGR.

Additionally, Favorable attributes such as high performance and small form factors drive adoption in the military Segment. The constant increase in defense budgets in developing and developed nations and the demand for technologically advanced products in the arsenal of national and international armed forces are expected to fuel the global market's growth further. According to the Stockholm International Peace Research Institute, global military spending reached USD 1,922 billion in 2019 compared to USD 1,855 billion in 2018, USD 1,807 billion in 2017, and USD 1,785 billion in 2016. Furthermore, military radio frequency and microwave products are expected to grow as technological advancements in phased-array systems and other complex applications depend heavily on these components, thereby driving demand for the RF GaN market revenue.

RF GaN Market Segment Insights:

RF GaN Type Insights

Based on type, the RF GaN Market segmentation includes GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond. The GaN-On-SiC segment dominated the market; because major applications of GaN-on-Si devices include base stations and telecommunication, defense and aerospace, and satellite communication. Besides, these devices are widely implemented in LEDs and power electronics.

Figure1: RF GaN Market, by Type, 2022 & 2032 (USD billion)

Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

RF GaN Application Insights

Based on Application, the RF GaN Market segmentation includes IT & Telecomm, aerospace, and military & defense. The military & defense segment dominated the market; the modernization of defense equipment is increasing the need for high-power semiconductor devices. Also, the growing demand for high-power applications is increasing the need for high frequencies in the defense sector. This provides several growth opportunities for the market. Defense applications are increasingly using RF GaN power devices due to the need to replace old vacuum tube designs with solid-state technologies that deliver the requirement for higher frequencies.

RF GaN Regional Insights

By Region, the study provides market insights into North America, Europe, Asia-Pacific, and the Rest of the World. The North American RF GaN market area will dominate this market; this is due to the government’s strategy is going to boost market expansion will boost the market growth in this Region.

Further, the major countries studied in the market report are The U.S., Canada, German, France, the UK, Italy, Spain, China, Japan, India, Australia, South Korea, and Brazil.

Figure2: RF GaN Market SHARE BY REGION 2022 (%)

Source: Secondary Research, Primary Research, MRFR Database, and Analyst Review

Europe RF GaN market accounts for the second-largest market share because the market is expanding because of the increased usage of modern technologies and semiconductors across various regional sectors. Further, the German RF GaN market held the largest market share, and the UK RF GaN market was the fastest-growing market in the European Region.

The Asia-Pacific RF GaN Market is expected to grow at the fastest CAGR from 2023 to 2032. This is due tothe increase of T/R systems in airborne radar; GaN devices are replacing bulky traveling wave-tube (TWT)-based systems, ensuring that defense will remain among the primary drivers of the GaN market. Moreover, China’s RF GaN market held the largest market share, and the Indian RF GaN market was the fastest-growing market in the Asia-Pacific region.

RF GaN Key Market Players& Competitive Insights

Leading market players are investing heavily in research and development in order to expand their product lines, which will help the RF GaN market, grow even more. Market participants are also undertaking various strategic activities to expand their global footprint, with important market developments including new product launches, contractual agreements, mergers and acquisitions, higher investments, and collaboration with other organizations. To expand and survive in a more competitive and rising market climate, the RF GaN industry must offer cost-effective items.

Manufacturing locally to minimize operational costs is one of the key business tactics manufacturers use in the global RF GaN industry to benefit clients and increase the market sector. The RF GaN industry has offered some of the most significant advantages in recent years. Major players in the RF GaN market, including NXP Semiconductors (Netherlands), Analog Devices, Inc. (US), ST Microelectronics N.V. (Switzerland)., and others, are attempting to increase market demand by investing in research and development operations.

Max Linear is an American hardware company. Founded in 2003, it provides highly integrated radio-frequency analog and mixed-signal semiconductor products for broadband communications applications. It is a New York Stock Exchange-traded company. Max Linear Inc. and RFHIC announced a collaboration to deliver a production-ready 400MHz Power Amplifier solution for 5G Macrocell radios, utilizing Max Linear Max LIN Digital Predistortion and Crest Factor Reduction technologies to optimize the performance of RFHIC’s latest ID-400W series GaN RF Transistors. Combining RFHIC’s dual-reverse GaN RF transistor ID41411DR with MaxLIN DPD and making it available as a pre-verified solution would allow Radio Access Network (RAN) product developers to quickly deliver ultra-wideband 400MHz Macro PAs for all global 5G mid-band deployments with high power efficiency and low emissions.

Integra is a highly regarded partner for Business Process and Technology Services, working with leading organizations around the globe. Integra helps its clients maximize their business value by utilizing cutting-edge technology in applications, Digital Experience, Cloud, Intelligent Automation, and Sustainability. Specialize in delivering comprehensive solutions for digital content, learning services, and content workflows to achieve substantial business growth. For their line of 100 V RF GaN products, Integra announced the inclusion of seven more devices with power levels up to 5 kW in a single transistor for the avionics, directed energy, electronic warfare, radar, and scientific application areas. These items use Integra's 100 V RF GaN technology to give the maximum power and efficiency possible in a single transistor while maintaining stable operating junction temperatures.

Key Companies in the RF GaN market include

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  Aethercomm Inc. (U.S.)

  
  


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  ROHM Semiconductors (Japan)

  
  


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  Analog devises Inc. (U.S.)

  
  


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  NXP Semiconductors NV (Netherlands)

  
  


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  STMicroelectronics NV (Switzerland)

  
  


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  Toshiba Corporation (Japan)

  
  


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  Cree Inc. (U.S.)

  
  

RF GaN Industry Developments

MaxLinear Incorporated and RFHIC have announced a collaboration to deliver a production-ready solution for 5G Macrocell radios. Utilization of MaxLinear MaxLIN Digital Predistortion and Crest Factor Reduction technologies, with the intention of optimizing the performance of RFHIC’s latest ID-400W series GaN RF Transistors; however, this could be done by combining RFHIC's dual-reverse GaN RF transistor ID41411DR with MaxLIN DPD to create pre-verified solutions that allow Radio Access Network (RAN) product developers to quickly deliver ultra-wideband 400MHz Macro PAs for all global 5G mid-band deployments having high power efficiency and low emissions.

Integra has added another seven devices with power levels up to 5 kW in a single transistor to its line of 100V RF GaN products for avionics, directed energy, electronic warfare, radar, and scientific applications, among others, while announcing them this June. These items use Integra's 100 V RF GaN technology, which is designed to give the maximum power and efficiency possible for a single transistor at stable operating junction temperatures.

The development of fifteen Open-RAN (radio access networks) delivery projects was announced in December last year by the Department for Digital, Culture, Media & Sport (DCMS). These projects aim to improve the supply chain capability for RF GaN devices used in 5G communication systems.

MaxLinear Inc. and Wolfspeed launched their new line of Gan-on-SiC power amplifiers for radio frequency front end. The amplifiers are targeted at enhancing wireless capacity at the base station level by boosting data transfer rates while accommodating more users when deployed on macro-cellular platforms regarding fifth-generation networks.

November 2022: AUO Corporation (TPE:2409) would incorporate ADI's matrix LED display driver technology into its automotive wide-screen display portfolio as per Analog Devices’ press release in November 2022. The technology is an industry first that supports local dimming, which reduces power consumption by at least 50% and guarantees operational safety.

October 2022: Analog Devices, Inc. (Nasdaq: ADI), announced its collaboration with Keysight Technologies, Inc. (NYSE: KEYS) to accelerate phased array adoption in October 2022. This technology allows us to achieve universal connection and sensing by simplifying the steps of system development in satellite communications, radar, and phased array system development.

September 2022: MaxLinear Inc. and RFHIC announced a collaboration to deliver a production-ready 400MHz Power Amplifier solution for 5G Macrocell radios, utilizing MaxLinear MaxLIN Digital Predistortion and Crest Factor Reduction technologies to optimize the performance of RFHIC’s latest ID-400W series GaN RF Transistors. Combining RFHIC’s dual-reverse GaN RF transistor ID41411DR with MaxLIN DPD and making it available as a pre-verified solution would allow Radio Access Network (RAN) product developers to quickly deliver ultra-wideband 400MHz Macro PAs for all global 5G mid-band deployments with high power efficiency and low emissions.

June 2022: For their line of 100 V RF GaN products, Integra announced the inclusion of seven more devices with power levels up to 5 kW in a single transistor for the avionics, directed energy, electronic warfare, radar, and scientific application areas. These items use Integra's 100 V RF GaN technology to give the maximum power and efficiency possible in a single transistor while maintaining stable operating junction temperatures.

RF GaN Market Segmentation:

RF GaN Type Outlook

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  GaN-On-SiC

  
  


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  GaN-On-Silicon

  
  


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  GaN-On-Diamond

  
  

RF GaN Application Outlook

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  IT & Telecomm

  
  


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  Aerospace

  
  


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  Military & Defense

  
  

RF GaN Regional Outlook

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  North America

  
  
  
  
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    US

    
    
  
  
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    Canada

    
    
  
  
  
  


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  Europe

  
  
  
  
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    Germany

    
    
  
  
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    France

    
    
  
  
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    UK

    
    
  
  
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    Italy

    
    
  
  
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    Spain

    
    
  
  
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    Rest of Europe

    
    
  
  
  
  


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  Asia-Pacific

  
  
  
  
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    China

    
    
  
  
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    Japan

    
    
  
  
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    India

    
    
  
  
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    Australia

    
    
  
  
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    South Korea

    
    
  
  
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    Australia

    
    
  
  
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    Rest of Asia-Pacific

    
    
  
  
  
  


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  Rest of the World

  
  
  
  
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    Middle East

    
    
  
  
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    Africa

    
    
  
  
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    Latin America