Several market factors drive the Resistive Random-Access Memory market, which in turn shapes its dynamics. Memory technologies that may offer higher write and read speeds while requiring less power are needed to keep up with the growth of data storage, AI, and Internet of Things applications. ReRAM's resistive switching technology satisfies these needs, making it an attractive option in the cutthroat memory market.
By combining their resources and expertise, companies that contribute establish a cooperative environment that supports the expansion and adoption of ReRAM. These collaborations improve the environment that surrounds the technology, accelerating its uptake and commercialization.
ReRAM creates including lower power consumption and faster speeds, but scalability and production cost issues must be resolved before ReRAM can be widely integrated. In order to render ReRAM a feasible and reasonably priced choice for mass-market applications, companies are actively working to enhance scalability, reduce production costs, and optimize manufacturing processes.
ReRAM's trajectory is influenced by inherent elements such as market acceptance and awareness. The adoption of the technology is expanding among different industries as more people become aware of its advantages. But raising market awareness requires ongoing work, and educating people about ReRAM's benefits and its applications is still essential to its wider acceptance. To raise awareness and knowledge among prospective users and decision-makers, ReRAM companies are engaging in marketing and campaigns for education.
The market for ReRAM is expected to expand as these aspects change since it provides a competitive and inventive memory solution that meets the growing needs of contemporary applications across a range of industries. The long-term profitability and viability of the sector will be greatly influenced by the participants' capacity to navigate and adjust to these market variables.
Report Attribute/Metric | Details |
---|---|
Growth Rate | 16% |
The Global ReRAM Market is expected to grow from USD 310.6 million in 2018 to USD 655 Million by 2027, at a CAGR of 16% during the forecast period. Since the past few years, emerging non-volatile memory technologies such as resistive random-access memory (ReRAM) have been getting significant attention owing to their lower read latency and faster write performance. With the advent of artificial intelligence, high-performance computing (HPC), and IoT devices, a significant amount of data generated is dense and complex. In order to process this data efficiently, innovative memory technologies are needed. Semiconductor companies are adopting ReRAM to deal with the requirements of artificial intelligence and HPC as it can significantly reduce the energy consumption of modern systems while enhancing their performance. Thus, the need for high bandwidth, low power consumption, and highly scalable memory device for technologies such as AI, IoT, and big data is boosting the growth of the ReRAM market.
Also, as ReRAM draws much less power than NAND flash, it is best suited for memory in sensor devices for industrial, and automotive applications. ReRAM is often cited as the logical replacement in applications such as solid-state drives (SSDs) and nonvolatile dual in-line memory modules (NVDIMMs) owing to its higher memory density, faster read and write speeds, and lower power requirement. Furthermore, the growing demand for emerging nonvolatile memory in connected devices is expected to fuel the growth of this market during the forecast period. However, as these memories rely on complicated switching mechanisms and exotic materials, it takes longer to develop. Also, the availability of alternatives like DRAM and flash is making it difficult for ReRAM to get a foothold in the market.
ReRAM is a type of non-volatile memory that comprises a memristor— whose resistance varies depending on the applied voltage. ReRAM has great potential for high storage density, lower power usage, greater read and write speeds, and affordable cost than flash memory because of the thinness of memristors. The two main types of ReRAMs available in the market are oxide-based ReRAM and conductive bridging RAM. At the moment, owing to its tremendous potential, ReRAM is on the verge of becoming a part of the digital mainstream.
In September 2019, Hewlett-Packard Company collaborated with Hynix Semiconductor Inc. to develop new materials and process integration technology to transfer the memristor technology from research to commercial development in the form of resistive random-access memory (ReRAM)In January 2019, the Indian Institute of Technology Delhi (IITD) partnered with Israel-based Weebit Nano to work on a research project that will apply Weebit’s SiOx ReRAM technology to computer chips used for AI
The global ReRAM market has been segmented based on type, end-user, and region.
On the basis of type, the market has been segmented into oxide-based ReRAM and conductive bridging RAM.
Based on end-user, the market has been segmented into IT & telecom, consumer electronics, aerospace & defense, healthcare, and others.
The global ReRAM market, by region, has been classified into North America, Europe, Asia-Pacific, the Middle East & Africa, and Central and South America.
The global ReRAM market is projected to grow at a significant rate during the forecast period from 2020 to 2027. The geographic analysis of the ReRAM market has been conducted for North America, Europe, Asia-Pacific, the Middle East & Africa, and Central and South America.
Asia-Pacific is expected to hold the largest market share in the ReRAM market from 2020 to 2027. Within the region, China (including Taiwan) is the leading producer of electronic products and one of the key investment destinations for market players. Furthermore, it accounts for a significant share of ReRAM production. North America holds a significant share of the ReRAM market owing to the high concentration of market players, easy availability of proficient technical expertise, and growing adoption of ReRAM across major application areas.
The prominent players in the ReRAM market are pursuing the launch of high-density ReRAM products as the key growth strategy to further increase their market shares. For instance, in 2019, Fujitsu Semiconductor Ltd in collaboration with Panasonic Semiconductor Solutions Co., Ltd launched an 8Mb ReRAM non-volatile memory that is effective for situation data read more than data were written out.
The key players in the ReRAM market are Crossbar Inc. (US), Fujitsu Limited (Japan), Intel Corporation (US), Panasonic Corporation (Japan), Semiconductor Manufacturing International Corporation (China), SK Hynix Inc. (South Korea), Adesto Technologies Corporation (US), Micron Technology, Inc. (US), TSMC (Taiwan), 4DS Memory Limited (US), and Reliance Memory (China), Sony Corporation (Japan), SanDisk (US), Weebit Nano (Australia), and Rambus Incorporated (US).
August 2023: Australia-based 4DS Memory stated in August 2023 that it tested their latest memory system product, the Fourth Platform Lot wafer, and performed “far better than expected.” The company added that its continued relationship with imec, a world-leading R&D and innovation hub for nanoelectronics and digital technologies, has been very helpful in making significant improvements to the 4Ds Platform Lot technology.
In 2022, Intrinsic Semiconductor Technologies demonstrated promising electrical performances of its silicon oxide-based resistive RAM, scaled effectively down to 50 nm. This could lead them to be used as low-cost, high-performance, non-volatile memory integrated with logic devices for advanced processing nodes due to excellent switching behavior, which is important for next-gen solid-state memories.
Fujitsu Semiconductor Memory Solution Limited presented an 8Mbit FRAM MB85RQ8MLX with Quad SPI interface in its SPI-connected FRAM product line with the highest density, thus improving data storage capacities in various applications requiring fast and reliable non-volatile memory access.
In order to improve the efficiency and performance of next-generation storage and computational solutions through innovative ReRAM technology, Xinyuan Semiconductor raised millions of yuan in funding through A round funds to develop breakthrough ReRAM-based storage and computing integrated devices.
CrossBar Inc., a prominent developer of non-volatile storage technology, introduced new capabilities for its Resistive RAM innovation on October 20th last year, focusing on applications that require few-time programmed as well as one-time-programmable non-volatile memories (NVM). By combining ReRAM with advanced acceleration hardware plus optimized neural networks, CrossBar aims to deliver unsupervised learning capability and power-efficient solutions.
March 2022: saw the release of a 12Mbit ReRAM (Resistive Random Access Memory) by Fujitsu Semiconductor Memory Solution Ltd, the MB85AS12MT — representing the largest density within Fujitsu’s ReRAM product family. The technology works by means of pulsed voltage programming for a metal oxide located between cross-point electrodes. This was jointly developed with Nuvoton Technology Corp., Ltd., Japan – previously known as Panasonic Semiconductor Solutions Co., Ltd. Fujitsu has been promoting ReRAM as an adjunct non-volatile memory to its ferroelectric RAM (FRAM). Packaged in 2mm × 3mm format, it includes a read current averaging 0.15mA during operations; therefore, it can be applied in wearable devices such as smartwatches and hearing aids.
January 2022: The availability of the 8Mbit FRAM MB85RQ8MLX featuring Quad SPI interface was reported by Fujitsu Semiconductor Memory Solution Limited in January 2022; this was considered the highest density within the line of Fujitsu’s SPI connection FRAM products.
© 2024 Market Research Future ® (Part of WantStats Reasearch And Media Pvt. Ltd.)