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ReRAM Market Share

ID: MRFR//6928-HCR | 100 Pages | Author: Aarti Dhapte| November 2024

Businesses spend money on R&D to provide new features, better performance, and increased dependability to their ReRAM products to set them apart. This distinction helps businesses forge a distinctive market identity and draws in clients looking for cutting-edge solutions.
Market share positioning requires the use of strong branding and marketing techniques. Businesses spend money developing distinctive brand identities and marketing the special benefits of their ReRAM goods. Marketing campaigns emphasize the advantages of ReRAM technology, namely its adaptability to a wide range of applications, less power usage, and quicker read and write rates. Gaining market share positioning requires developing a favorable impression of ReRAM and establishing brand recognition among prospective consumers.
Market reach and worldwide growth are two tactics used by businesses trying to gain market share. This means concentrating on new markets and regions in order to grow the consumer base. Manufacturers can take advantage of a range of opportunities and build a presence in emerging industries by customizing their tactics to the specific needs and preferences of different markets.
Resistive random-access memory will become necessary as the market for linked products, such wearables, expands. These gadgets use Resistive Random-Access Memory to expand their storage capacity. Furthermore, as connected homes and towns become more common, there will undoubtedly be a rise in the variety of linked devices, making servers with massive memory capacities necessary. Therefore, it is anticipated that during the projected period, a spike in demand for connected devices will propel the market's pace of advancement.
Ultimately, adaptability and response to customer input and industry trends are critical components of a successful market share positioning plan. Businesses who successfully employ these tactics will be in a better position to drive growth and influence the direction of non-volatile memory technology by taking a more competitive stand in the ReRAM market.

Covered Aspects:

Report Attribute/Metric Details
Base Year For Estimation 2019
Historical Data 2018
Forecast Period 2020-2027
Growth Rate 16%

ReRAM Market Size and Overview 


The Global ReRAM Market is expected to grow from USD 310.6 million in 2018 to USD 655 Million by 2027, at a CAGR of 16% during the forecast period. Since the past few years, emerging non-volatile memory technologies such as resistive random-access memory (ReRAM) have been getting significant attention owing to their lower read latency and faster write performance. With the advent of artificial intelligence, high-performance computing (HPC), and IoT devices, a significant amount of data generated is dense and complex. In order to process this data efficiently, innovative memory technologies are needed. Semiconductor companies are adopting ReRAM to deal with the requirements of artificial intelligence and HPC as it can significantly reduce the energy consumption of modern systems while enhancing their performance. Thus, the need for high bandwidth, low power consumption, and highly scalable memory device for technologies such as AI, IoT, and big data is boosting the growth of the ReRAM market.

Also, as ReRAM draws much less power than NAND flash, it is best suited for memory in sensor devices for industrial, and automotive applications. ReRAM is often cited as the logical replacement in applications such as solid-state drives (SSDs) and nonvolatile dual in-line memory modules (NVDIMMs) owing to its higher memory density, faster read and write speeds, and lower power requirement. Furthermore, the growing demand for emerging nonvolatile memory in connected devices is expected to fuel the growth of this market during the forecast period. However, as these memories rely on complicated switching mechanisms and exotic materials, it takes longer to develop. Also, the availability of alternatives like DRAM and flash is making it difficult for ReRAM to get a foothold in the market.


ReRAM is a type of non-volatile memory that comprises a memristor— whose resistance varies depending on the applied voltage. ReRAM has great potential for high storage density, lower power usage, greater read and write speeds, and affordable cost than flash memory because of the thinness of memristors. The two main types of ReRAMs available in the market are oxide-based ReRAM and conductive bridging RAM. At the moment, owing to its tremendous potential, ReRAM is on the verge of becoming a part of the digital mainstream.


In September 2019, Hewlett-Packard Company collaborated with Hynix Semiconductor Inc. to develop new materials and process integration technology to transfer the memristor technology from research to commercial development in the form of resistive random-access memory (ReRAM)In January 2019, the Indian Institute of Technology Delhi (IITD) partnered with Israel-based Weebit Nano to work on a research project that will apply Weebit’s SiOx ReRAM technology to computer chips used for AI


ReRAM Market Segmentation


The global ReRAM market has been segmented based on type, end-user, and region.


On the basis of type, the market has been segmented into oxide-based ReRAM and conductive bridging RAM.


Based on end-user, the market has been segmented into IT & telecom, consumer electronics, aerospace & defense, healthcare, and others.


The global ReRAM market, by region, has been classified into North America, Europe, Asia-Pacific, the Middle East & Africa, and Central and South America.


Regional Insights


The global ReRAM market is projected to grow at a significant rate during the forecast period from 2020 to 2027. The geographic analysis of the ReRAM market has been conducted for North America, Europe, Asia-Pacific, the Middle East & Africa, and Central and South America.


Asia-Pacific is expected to hold the largest market share in the ReRAM market from 2020 to 2027. Within the region, China (including Taiwan) is the leading producer of electronic products and one of the key investment destinations for market players. Furthermore, it accounts for a significant share of ReRAM production. North America holds a significant share of the ReRAM market owing to the high concentration of market players, easy availability of proficient technical expertise, and growing adoption of ReRAM across major application areas.


ReRAM Market Key Player & Competitive Analysis


The prominent players in the ReRAM market are pursuing the launch of high-density ReRAM products as the key growth strategy to further increase their market shares. For instance, in 2019, Fujitsu Semiconductor Ltd in collaboration with Panasonic Semiconductor Solutions Co., Ltd launched an 8Mb ReRAM non-volatile memory that is effective for situation data read more than data were written out.


Key Companies & Market Share Insights

The key players in the ReRAM market are Crossbar Inc. (US), Fujitsu Limited (Japan), Intel Corporation (US), Panasonic Corporation (Japan), Semiconductor Manufacturing International Corporation (China), SK Hynix Inc. (South Korea), Adesto Technologies Corporation (US), Micron Technology, Inc. (US), TSMC (Taiwan), 4DS Memory Limited (US), and Reliance Memory (China), Sony Corporation (Japan), SanDisk (US), Weebit Nano (Australia), and Rambus Incorporated (US).


ReRAM Industry Developments


August 2023: Australia-based 4DS Memory stated in August 2023 that it tested their latest memory system product, the Fourth Platform Lot wafer, and performed “far better than expected.” The company added that its continued relationship with imec, a world-leading R&D and innovation hub for nanoelectronics and digital technologies, has been very helpful in making significant improvements to the 4Ds Platform Lot technology.


In 2022, Intrinsic Semiconductor Technologies demonstrated promising electrical performances of its silicon oxide-based resistive RAM, scaled effectively down to 50 nm. This could lead them to be used as low-cost, high-performance, non-volatile memory integrated with logic devices for advanced processing nodes due to excellent switching behavior, which is important for next-gen solid-state memories.


Fujitsu Semiconductor Memory Solution Limited presented an 8Mbit FRAM MB85RQ8MLX with Quad SPI interface in its SPI-connected FRAM product line with the highest density, thus improving data storage capacities in various applications requiring fast and reliable non-volatile memory access.


In order to improve the efficiency and performance of next-generation storage and computational solutions through innovative ReRAM technology, Xinyuan Semiconductor raised millions of yuan in funding through A round funds to develop breakthrough ReRAM-based storage and computing integrated devices.


CrossBar Inc., a prominent developer of non-volatile storage technology, introduced new capabilities for its Resistive RAM innovation on October 20th last year, focusing on applications that require few-time programmed as well as one-time-programmable non-volatile memories (NVM). By combining ReRAM with advanced acceleration hardware plus optimized neural networks, CrossBar aims to deliver unsupervised learning capability and power-efficient solutions.


March 2022: saw the release of a 12Mbit ReRAM (Resistive Random Access Memory) by Fujitsu Semiconductor Memory Solution Ltd, the MB85AS12MT — representing the largest density within Fujitsu’s ReRAM product family. The technology works by means of pulsed voltage programming for a metal oxide located between cross-point electrodes. This was jointly developed with Nuvoton Technology Corp., Ltd., Japan – previously known as Panasonic Semiconductor Solutions Co., Ltd. Fujitsu has been promoting ReRAM as an adjunct non-volatile memory to its ferroelectric RAM (FRAM). Packaged in 2mm × 3mm format, it includes a read current averaging 0.15mA during operations; therefore, it can be applied in wearable devices such as smartwatches and hearing aids.


January 2022: The availability of the 8Mbit FRAM MB85RQ8MLX featuring Quad SPI interface was reported by Fujitsu Semiconductor Memory Solution Limited in January 2022; this was considered the highest density within the line of Fujitsu’s SPI connection FRAM products.


Intended Audience



  • RAM Manufacturers

  • Technology Providers

  • Original Equipment Manufacturers

  • Equipment distributors and suppliers

  • Technology standards organizations

  • Technology investors

  • System Integrators

  • Research institutes, organizations, and consulting companies

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