GaN on Si EPI wafers Market is predicted to reach USD 5,374.8 million at a CAGR of 16.6% during the forecast period 2024-2032

Market Research Future (MRFR) has published on the “Global GaN on Si EPI wafers Market”.

The GaN on Si EPI wafers market is estimated to register a CAGR of 16.6% during the forecast period of 2024 to 2032.

MRFR recognizes the following companies as the key players in the GaN on Si EPI wafers market— Infineon Technologies, Texas Instruments Incorporated, Toshiba Corporation, Panasonic Corporation, NexGen Power Systems, Efficient Power Conversion Corporation, STMICROELECTRONICS, Navitas Semiconductor Corporation, and NEXPERIA.

GaN on Si EPI wafers Market Highlights

The global GaN on Si EPI wafers market is accounted for to register a CAGR of 16.6% during the forecast period and is estimated to reach USD 5,374.8 million by 2032.

The increasing demand for higher power density power electronics is considered a key driver for the GaN on Si EPI wafer market. One of the main drivers of the GaN on Si EPI wafer market is the trend towards miniaturization of electronic devices and increasing demand for high-performance electronic products. As electronic devices become smaller and more complex, there is a growing need for more compact and efficient power electronics. GaN on Si EPI wafers offer higher power density and efficiency compared to traditional silicon-based power electronics, making them ideal for high-power applications that require smaller and more efficient power electronics. Another driver of the GaN on Si EPI wafer market is the growing demand for 5G technology. 5G technology requires higher frequency and faster data rates than previous generations of wireless technology, which in turn requires the use of new materials and technologies such as GaN. GaN is already being used in RF applications, and its use in 5G technology is expected to increase significantly in the coming years.

Segment Analysis

The GaN on Si EPI wafers market has been segmented into structure, applications, Procurement model, and industry verticals.         

The GaN on Si EPI wafers market in this report has been segmented on the basis of Structure into three types, namely Lateral GaN on Si, Vertical GaN on Si and Hybrid GaN on Si.

The global GaN on Si EPI wafers market, in this report, has been segmented on the basis of Application into low-power applications, medium-power applications, high-power applications, very high-power applications. Low-power applications is further segmented into AC-DC adapters for laptops and other electronic devices, USB-PD chargers, Wireless charging pads, and others. Medium-Power Applications is segmented into LED lighting power supplies, AC-DC converters, Power supplies for electronic appliances, and others. High-Power Applications is segmented into Electric vehicle (EV) power converters, Motor drives, Power converters, and others. Very-High Power Applications is segmented into Grid-tied inverters for utility-scale solar and wind power plants, Traction inverters, Power converters, and others.

The global GaN on Si EPI wafers market, in this report, has been segmented on the basis of Procurement model into Tender Based and Direct Purchase. Direct purchase segment holds the largest market share which is 64.6% while the tender based segment holds 35.4% share as of 2022.

The GaN on Si EPI wafers market in this report has been segmented on the basis of IT & Telecom, consumer electronics, safety and security, automotive, aerospace and defence, and others. Consumer electronics holds the second largest share, which is 19.9% while others segment holds the largest market share.

Browse In-depth Details [Table of Content, List of Figures, List of Tables] of GaN on Si EPI wafers Market Research Report

Regional Insights

Based on Region, the global GaN on Si EPI wafers is segmented into North America, Europe, Asia-Pacific, Middle East & Africa, and South America. Asia-Pacific holds the largest market share which is 44.1% of the total share while North America holds the second largest market share which is 29.3% of the total share.

North America has been further segmented into the US, Canada, and Mexico. North America accounts for one of the largest market shares in the Gan on silicon for power market due to the presence of notable GaN on silicon companies such as Texas Instruments Incorporated, NXP USA Inc and many others. The major players in the GaN market have been working on the technology for over 15 years and have amassed a sizable body of knowledge, skill, and competence. But most importantly, they have developed an almost fervent feeling of faith in technology's long-term potential.

Asia-Pacific has been further segmented into China, Japan, India, and the Rest of Asia-Pacific. Asia-Pacific is another promising market for GaN on Si for power. Asia-Pacific is a center for automotive, aerospace, and semiconductor technology. Due to rapidly expanding markets for energy-efficient electronics, China, India, and Japan account for large shares in the area. The rapidly developing semiconductor market is one of the major factors which drives the growth of GaN on Si for power in the Asia-Pacific region.

Key Findings of the Study

• The global GaN on Si EPI wafers market is expected to reach USD 5,374.8 million by 2032, at a CAGR of 16.6% during the forecast period.


• The Asia-Pacific region accounted for the fastest-growing global market.


• Infineon Technologies, Texas Instruments Incorporated, Toshiba Corporation, Panasonic Corporation, NexGen Power Systems, Efficient Power Conversion Corporation, STMICROELECTRONICS, Navitas Semiconductor Corporation, NEXPERIA, Semiconductor Components Industries, Llc, Rohm Company Ltd are the key market players.