IGBT Companies

Competitive Landscape of the IGBT Market:

The Insulated-Gate Bipolar Transistor (IGBT) market is a dynamic and crucial space within power electronics, powering everything from home appliances to electric vehicles and renewable energy systems. Understanding its competitive landscape is essential for stakeholders, from established manufacturers to new entrants. Here's a comprehensive look at the IGBT market, delving into key strategies, factors influencing market share, the emergence of new players, and the overall competitive scenario:

Some of the IGBT companies listed below:

• Infineon Technologies AG 


• ABB Ltd


• Mitsubishi Electric Corporation


• Danfoss Group


• Fuji Electric Co., Ltd.


• Hitachi, Ltd.


• Toshiba Corporation


• ROHM CO., LTD


• LITTELFUSE, INC.


• StarPower Semiconductor Ltd.

Strategies Adopted by Key Players:

To thrive in this competitive arena, companies employ a range of strategies. Product innovation sits at the forefront, with players constantly pushing the boundaries of efficiency, switching speed, and operating temperature. For example, Infineon's CoolMOS™ 7 series boasts industry-leading efficiency, while Mitsubishi Electric's 12th Gen IGBT modules offer exceptional switching speeds.

Strategic partnerships and acquisitions are another key tactic. Renesas Electronics' acquisition of Intersil in 2017 strengthened its position in IGBT modules, while ABB's partnership with Power Integrations provides access to advanced gate driver technology.

Expansion into new markets and applications is a crucial growth driver. STMicroelectronics' focus on the Chinese electric vehicle market and Infineon's foray into industrial automation are examples of this approach.

Vertical integration is gaining traction, with companies like ROHM Semiconductor investing in silicon wafer production to secure raw materials and control production costs.

Sustainability is also emerging as a differentiator. Companies like Fuji Electric are developing IGBTs with reduced environmental impact, catering to the growing demand for eco-conscious solutions.

Market Segmentation:

Understanding the IGBT market's competitive landscape requires analyzing its distinct segments. The market primarily divides into two categories: discrete IGBTs and IGBT modules. Discrete IGBTs, used in low- and medium-power applications, are dominated by established players like Infineon Technologies, Mitsubishi Electric, and ON Semiconductor. However, the high-growth segment lies in IGBT modules, catering to medium- and high-power applications in industries like renewable energy and electric vehicles. Here, the competition intensifies with companies like ABB, Siemens, and STMicroelectronics vying for market share.

Factors for Market Share Analysis:

Analyzing market share in the IGBT landscape is complex due to its dynamic nature. Key factors to consider include:

• Revenue and unit shipments: This provides a quantitative measure of a company's performance.


• Product portfolio breadth and depth: Offering a diverse range of IGBTs catering to various applications and power levels strengthens market reach.


• Geographic presence: A global footprint allows companies to capitalize on growth opportunities in different regions.


• Technological leadership: Innovation in efficiency, switching speed, and other critical parameters attracts customers and fosters brand loyalty.


• Customer relationships and brand reputation: Strong customer partnerships and a trusted brand image provide a competitive edge.

New and Emerging Players:

The IGBT market is witnessing the rise of new and emerging companies, adding a fresh layer of competition. Chinese manufacturers like CRRC and SiC Semiconductor are making inroads with cost-competitive offerings. Startups like GaN Systems and Navitas Semiconductor are challenging the dominance of silicon IGBTs with gallium nitride (GaN) alternatives, offering higher switching speeds and improved efficiency.

Latest Company Updates:

Infineon Technologies AG:

• October 26, 2023: Launched its CoolSiC™ MOSFET Gen5 portfolio, offering significant efficiency improvements for EV converters and chargers. 


• September 5, 2023: Announced a collaboration with REE Automotive to develop high-voltage IGBT modules for electric vehicles. 


• July 4, 2023: Received a €123 million order from a major European train manufacturer for IGBT modules for high-speed trains. 

ABB Ltd:

• December 5, 2023: Unveiled its latest Azipod® propulsion system with silicon carbide (SiC) power electronics, including IGBTs, for improved efficiency in cruise ships


• November 15, 2023: Successfully installed the world's first offshore wind farm grid connection system using high-voltage IGBTs for enhanced power transmission. 


• October 11, 2023: Signed a multi-year partnership with STMicroelectronics to develop and manufacture next-generation IGBTs for industrial applications. 

Mitsubishi Electric Corporation:

• December 18, 2023: Developed the world's smallest 12th-generation IGBT module for industrial robots, reducing size and weight by 30%.


• November 9, 2023: Increased production capacity for IGBTs at its Fukuoka factory by 30% to meet growing demand from the EV market. 


• September 25, 2023: Presented its latest 12th-generation IGBT technology at the International Conference on Solid-State Devices and Materials, highlighting its focus on efficiency and performance.