Pune, India, May 15, 2017, /MRFR Press Release/- Market Research Future published a half-cooked research report on IGBT Market.
Market Highlights
In this technologically driven environment with development in each and every sector, the IGBT market is coming up with whole new innovation in the power transmission components. It has a very low on-state voltage drop due to conductivity modulation and has superior on-state current density. So smaller chip size is possible and the cost can be reduced. Low driving power and a simple drive circuit due to the input MOS gate structure. It can be easily controlled as compared to current controlled devices (thyristor, BJT) in high voltage and high current applications.
The IGBT market is growing rapidly over 9% of CAGR and is expected to reach approximately at USD 11 billion by the end of forecast period.
Taste the market data and market information presented through more than 30 market data tables and figures spread over 100 numbers of pages of the project report. Avail the in-depth table of content TOC & market synopsis on “The IGBT Market Research Report -Forecast to 2023”.
Access Report Details @ https://www.marketresearchfuture.com/reports/igbt-market-2854
IGBT Market Segmentation
The IGBT market has been segmented on the basis of type, power rating and application. On basis of type the IGBT market consists discrete and module. The module has evolved from the traditional flat planar chip structure towards the trench gate structure and, with the adoption of the CSTBT (Carrier Stored Trench-Gate Bipolar Transistor) has supported the reduced power loss and increased miniaturization of industrial equipment. The product lineup includes various types of IGBT modules, such as the NF series that has maintained its traditional shape and the NFH series for high-frequency switching.
The prominent players in the IGBT market are ABB Ltd. (Switzerland), Danfoss A/S (Denmark), STMicroelectronics N.V. (Switzerland), Toshiba Corporation (Japan), Fairchild Semiconductor International, Inc. (U.S.), Fuji Electric Co. Ltd. (Japan), Hitachi Ltd. (Japan), Infineon Technologies AG (Germany), Mitsubishi Electric Corp. (Japan), Renesas Electronics Corp. (Japan) among others.
Market Research Analysis:
Market Research Future Analysis shows that new adoptions of power efficient equipments. The segmentation based on application includes energy and power. To make smarter use of energy resources, demand grows for more innovative, efficient insulated gate bipolar transistor (IGBT) power modules. These advanced power electronic devices are finding increasing use in a wide range of applications, including variable speed drives, solar inverters, wind power converters, uninterruptable power supplies, power transmission systems, electric vehicles.
Regional analysis for IGBT market is studied in different geographic regions as North America, Europe, Asia-Pacific and Rest of World. Asia-Pacific region is mainly dominating the market because of advanced technological growth and electronics manufacturer present in the region. North America market is identified as growing market because of major technology players present in the industry.The growing demand of green energy is also one of the dominant figure in North America which is fostering the IGBT market.
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Akash Anand,
Market Research Future
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Email: akash.anand@marketresearchfuture.com
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Report details
| Companies Covered | 15 |
| Pages | 100 |
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