GaN Semiconductor Device, Global Market Estimated to Perceive Accrued Value with a Staggering CAGR; MRFR Unleashes Industry Insights Up To 2032

Market Research Future (MRFR) has published on the “Global GaN Semiconductor Devices Market”.

Gallium Nitride (GaN) is a third band gap semiconductor widely used in LED diodes. Chemically, the compound is very tough and composed of Wurtzite crystalline structure. Additionally, GaN is the emerging substitute to pure silicon in the semiconductor sector. The properties of GaN are intense power efficient compound which can work with high frequency and can emit high brightness and intensity when used in opto-semiconductor.

Market Research Future (MRFR) has published a cooked research report on the “Global GaN Semiconductor Devices Market” that contains information from 2019 to 2032. The Snowmobile Parts & Accessories Market is estimated to register a CAGR of 20.83% during the forecast period of 2024 to 2032.

MRFR recognizes the following companies as the key players in the global GaN Semiconductor Devices market - Fujitsu Ltd., Panasonic Coporation, Texas Instruments, Osram Opto-Semiconductors, Cree Incorporate, Toshiba, AixtronSE, Infineon Technologies, ROHM Company Limited, NXP Semiconductors, KoninklijkePhilips N.V., Qorvo, Efficient Power Conversion Corporation, Taiwan Semiconductor Manufacturing Company, Intel Corporation, GLOBALFOUNDRIES, Semiconductor Manufacturing International Corp.

GaN Semiconductor Devices Market Highlights

The Global GaN Semiconductor Devices Market is accounted for to register a CAGR of 20.83% during the forecast period and is estimated to reach USD 60,234.2 million by 2032.

Global sales of GaN power semiconductors have continued to increase. Consumer electronics, automotive, aerospace, and military & defense industrial applications are growing, which is majorly responsible for the global market growth. Innovative GaN applications are starting to appear, RF power electronics are using it more frequently, and it has great qualities like high breakdown voltage and low energy consumption. These are key reasons driving the growth of the global market. Furthermore, the market has grown due to the product's rising application in electrified vehicle chargers, wind turbines, heavy industrial machinery and control systems, optoelectronic devices, and electromechanical computers. Additional factors driving the market expansion include a growing focus on renewable energy generation, a rise in demand for LEDs in the consumer electronics and automotive industries, and a strong demand among telecommunications service providers for 5G network infrastructure.

The market for GaN semiconductor devices will rise as a result of the increasing number of electronic devices, which will increase demand for signal diodes. According to the federal reserve system, the industrial production of home electronic appliances increased by 15.2% between January 2022 and January 2023. The electronic and electric appliance business is anticipated to grow further in the upcoming years. According to estimates from the World Bank, it will be worth more than 450 billion US dollars by 2023. Furthermore, GaN power semiconductors are essential to the automobile industry's transition to electric mobility, which is changing considerably. EVs with GaN-based power electronics can have more effective onboard chargers, inverters, and motor drives, resulting in longer driving ranges and quicker charging times. Additionally, GaN power semiconductors can aid in the development of sophisticated driver assistance systems by enabling high-frequency and high-power devices used in radar, lidar, and other sensor technologies.

Segment Analysis

The Global GaN Semiconductor Devices Market has been segmented based on device, vertical, wafer size, and type.  Based on device, the global GaN Semiconductor Devices Market segmentation includes Transistor, Diode, Rectifier, Power IC, Supply and Inverter, Amplifiers, Lighting and Laser, Switching Systems, and Others. The Transistor segment held the majority share in 2022, contributing around ~28.0 % to the market revenue. The transistor segment is growing in the GaN semiconductor devices market due to the advantages offered by GaN-based transistors over silicon-based transistors. GaN-based transistors are efficient and functional at high power density and high switch frequency, resulting in a greater share of the transistor segment in the market. In recent years, there has been increasing adoption of GaN-based power transistors and 4G technology-enabled devices, resulting in the increased demand for high-power transistors for base stations used in the telecommunication sector.

Based on Vertical, the global GaN Semiconductor Devices Market segmentation includes Automotive, Industrial, Defense & Aerospace, Consumer Electronics, Telecommunication, Medical and Others. The Consumer Electronics segment held the majority share in 2022 contributing around ~25.9% to the market revenue. The Consumer Electronics segment is growing in the GaN semiconductor devices market due to the advantages offered by GaN semiconductor devices over silicon devices, the presence of consumer electronics manufacturers, and the growing demand for RF devices. GaN-based semiconductors are expected to suffice low power consumption and high-efficiency requirements for the proper functioning of IoT-enabled products. Additionally, these semiconductors are widely used in Distributed Antenna System (DAS), small cell, and remote radio head network densification.

Based on Wafer Size, the global GaN Semiconductor Devices Market segmentation includes 2-inch, 4-inch, 6 inch, and more than 6 inches. By wafer size, 4-inch segment holds the majority market share in 2022 contributing 33.4 % of the market share. The 4-inch wafer category held the biggest market share during the forecast period. the 4-inch wafer size segment is growing in the GaN semiconductor devices market due to its ability to facilitate large-scale production, greater mechanical strength, and wide applications in power supply and communication devices.

Based on Type, the global GaN Semiconductor Devices Market segmentation includes Power semiconductors, RF semiconductors, and Opto semiconductors. By Type, Opto semiconductors segment holds the majority market share in 2022 contributing 35.7 % of the market share. The Opto-semiconductors segment is growing in the GaN semiconductor devices market due to its wide range of applications in devices such as LEDs, solar cells, photodiodes, lasers, and optoelectronics. The automotive sector is increasingly utilizing opto-semiconductors in automotive lights, indoor and outdoor lighting, and pulse-powered laser. The Opto-semiconductors segment is expected to continue to grow due to the increasing demand for energy-efficient lighting solutions and the growing adoption of GaN-based semiconductors in the automotive sector.

Browse In-depth Details [Table of Content, List of Figures, List of Tables] of GaN Semiconductor Devices Market Research Report

Regional Analysis

By Region, the study provides market insights into North America, Europe, Asia-Pacific, and Rest of the World. In terms of revenue, APAC held the largest share of 46.9% in the GaN Semiconductor Devices Market in 2022 and is expected to maintain its dominance during the forecast period. Due to growing defense budgets in countries like China, India, and South Korea, there is a greater need for dependable communication equipment. This need is expected to drive the market for RF devices based on GaN. The market is further driven by the enormous increase in the usage of wireless electronic devices and the extensive telecommunications infrastructure in the Asia-Pacific region.

North America is the second largest market in the GaN Semiconductor Devices market. Increasing investments by the defense and aerospace industry in research and development activities, robust research and development infrastructure, and substantial funding provided by government bodies to semiconductor companies in the region propel the market growth.

Europe is expected to witness the fastest growth in the GaN Semiconductor Devices market during the forecast period. The defense and aerospace industries' rising R&D expenditures are driving the market expansion in the area. In addition, it is projected that government assistance provided to semiconductor businesses will be a major driver of activity in the Europe.

Rest of the World is anticipated to grow substantially over the forecast period. This surge can also be attributed to several factors, including the region's significant technological advancements and the increased demand for consumer electronics by rapid urbanization. Due to its power efficiency, GaN is increasingly being used in consumer electronics such as personal computers, laptops, televisions, mobile phones, tablet PCs, etc., fueling the growth of this market in the country.

Key Findings of the Study

• The Global GaN Semiconductor Devices Market is expected to reach USD 60234.2 million by 2032, at a CAGR of 20.83% during the forecast period.


• The APAC region accounted for the fastest-growing global market, imperative factors, such as the significant number of investments and key market players in Europe, making it the primary contributor to the market share.


• Based on Tye, the Opto semiconductors segment held the majority share in 2022, contributing around ~35.7% to the market revenue.


• Fujitsu Ltd., Panasonic Corporation, Texas Instruments, Osram Opto-Semiconductors, Cree Incorporate, Toshiba, AixtronSE, Infineon Technologies, ROHM Company Limited, NXP Semiconductors, KoninklijkePhilips N.V., Qorvo, Efficient Power Conversion Corporation, Taiwan Semiconductor Manufacturing Company, Intel Corporation, GLOBALFOUNDRIES, Semiconductor Manufacturing International Corp. and Others are key market players.