Gallium Nitride (GaN) Semiconductor Devices is presumed to Accrue Highest Revenue of USD 60234.2 Million

Pune, India, February 20, 2018  /MRFR Press Release/- Market Research Future published a half cooked research report on Global Gallium Nitride (GaN) Research Report Forecast till 2032.

Market Highlights

Rapid development in electronics and semiconductor sectors has increased the need for transistors and integrated circuits (IC) in GaN semiconductor devices. Additionally, the GaN possess the characteristics such as low resistance which reduces the conductance dissipation, minimizes the switching losses, low power to drive the circuits and reduced size at printed circuit boards (PCB) which adds to the market of GaN semiconductor devices. Additionally, GaN provides greater stability in radioactive environment and exhibits a unique ability to control and produce electrons more than 1000 times of silicon (Si) is expected to be major advantages for the GaN semiconductor devices market to grow over the forecast period.

Moreover, the GaN semiconductor device are bifurcated into type, wafer size, devices, and end user. By type, gallium nitride semiconductor devices is divided into opto semiconductor, power semiconductor, and RF semiconductors. Based on wafer size the gallium nitride semiconductor is further sub categorized into 2 inches, 4 inches, and 6 inches and above. Furthermore, device based gallium nitride semiconductor is subdivided into transistor, diode, rectifier, power ICs, power drivers, supply & inverter, amplifiers, lighting & laser, and switching systems. Lastly, the gallium nitride semiconductor devices are sub segmented into end user which include automotive, aerospace & defense, consumer electronics, telecommunication, and medical

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Key Players

Some of the key players of Gallium Nitride (GaN) semiconductor devices market include Fujitsu Ltd (Japan), Panasonic Semiconductors (Japan), Texas Instruments  (U.S.),RF Micro Devices Corporation (U.S.), Osram Opto-semiconductors (Germany), Cree Incorporated  (U.S.), Toshiba  (Japan), Aixtron SE (Germany), Infineon Technologies (Germany), Gallia Semiconductor  (Belgium), ROHM Company Limited  (Japan), NXP Semiconductors (U.S.), Koninklijke Philips N.V. (the Netherlands), Nichia Corporation (Japan), and Qorvo (U.S.).

Regional Analysis

Geographically, the gallium nitride (GaN) semiconductor devices are categorized into four  different regions such as North America, Asia Pacific, Europe, and Rest of the World.

North America is expected to be a prominent region in the GaN semiconductor devices market over forecast period. The U.S. and Canada are the leading countries in this region. This is attributed to large investment by the companies for innovation in semiconductor activities. Additionally, advancement of semiconductor power applications and enlarging the market base of GaN semiconductor are anticipated to drive the GaN semiconductor devices market over the review period 2024-2032.

Asia Pacific is expected to be the fastest growing region owing to, surging need for highly efficient RF components in consumer electronics and military applications. However, rapid increase in a large number of electronic component manufacturer are expected to propel the GaN semiconductor devices market over the review period 2024-2032.